| ‘lllvVISHAYQV 100 3 0.1 Instantaneous Fon~ard Current (A) 0.6 0.3 www.vishay.com Rs1A, RS1 B, RS1 D, RS1 G, RS1J, Rs1K 100 Junction Capacitance (pF) 3 1.0 1.2 14 1.6 1.3 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Fonlvard Characteristics 100 3 0.1 Instantaneous Reverse Current (uA) 100 Transient Thermal Impedance (QC/W) 3 Percent ol Raled Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in Inches (miIIimeters) Do-214Ac (SMA) Cathode Band Vishay General Semiconductor Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Mounted on 0.2“ x 0.2“ (5 mm x 5 mm)Copper Pad Area 0.1 Mounting Pad Layout 1 10 l- Pulse Duration (S) Fig. 6 - Typical Transient Thermal Impedance Dues (1.68) <> 0 074 (l 88IMW MAX u.us5 (1.65ume (1.25 y u177(4 50) f4*4444 EE7E4iT 44444’ , u U12 (u 305) 0 06,\‘A)“r: 52’ <—uuus (u 152) ’ Mug (5 25) REF U.U78 (1.93) D060 (1 52] + U-030 (U 79] 0 DUB (0 203) U (0) 0 208 (5 28) Revision: 21 -Aug-1 33 0 W4 (A 93) Document Number: 88707 For technical questions within your region: Diog§sArnericas@vishay.corn, DiogesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vish rn d c?9100 |